| 摘要 |
On a mount surface portion of a semiconductor laser device, a first bonding layer is so formed that a first region near a light-emitting area is exposed. On a mount surface portion of a sub mount is formed a second bonding layer having a melting point T 2 lower than a melting point T 1 of the first bonding layer. The first and second bonding layers are heated in a mutually pressed state at a temperature T lower than the melting point T 1 of the first bonding layer but higher than the melting point T 2 of the second bonding layer (T 1 >T>T 2 ) to bond the semiconductor laser device to the sub mount. When the semiconductor laser device is bonded to the sub mount, the first region serves as the non-bonding area.
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