发明名称 Method of manufacturing semiconductor devices.
摘要 <p>Disclosed is a method of manufacturing semiconductor devices in which a desired pattern having an area size larger than the field size that can be obtained in one exposure process step of an exposure device is formed. The manufacturing method includes the steps of dividing the desired pattern into a plurality of portions, and conducting exposure on the dividing patterns in a joined fashion. &lt;IMAGE&gt;</p>
申请公布号 EP0472217(A1) 申请公布日期 1992.02.26
申请号 EP19910114197 申请日期 1991.08.23
申请人 CANON KABUSHIKI KAISHA 发明人 MOMMA, GENZO;YUZURIHARA, HIROSHI
分类号 G03F7/20;H01L21/027;H01L21/30 主分类号 G03F7/20
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