发明名称 |
Non-volatile semiconductor memory device |
摘要 |
A non-volatile semiconductor memory device enabling reading at high speed has a memory cell array including a plurality of memory cells arranged in a column direction and a row direction, each of the memory cells having first and second non-volatile memory elements that are controlled by one word gate and first and second control gates. One of the first and second non-volatile memory elements stores data, but the other does not function as an element which stores data.
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申请公布号 |
US6922357(B2) |
申请公布日期 |
2005.07.26 |
申请号 |
US20030377707 |
申请日期 |
2003.03.04 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KAMEI TERUHIKO;KANAI MASAHIRO |
分类号 |
G11C16/04;G11C7/18;G11C16/06;G11C16/26;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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