FORMATION OF DYNAMIC RANDOM ACCESS MEMORY CELL HAVING STORAGE CAPACITOR

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a dynamic random access memory having an increased capacitance. SOLUTION: Very fine particles are prepared in a micro-emulsion (36). The particles are deposited on the lower electrode layer of a memory cell (38). Then a micro-villous pattern is formed on the lower electrode layer by using the particles as a mask (40) and an HSG polysilicon layer is deposited on the micro-villous pattern (42). Finally, a storage capacitor for dynamic access memory is formed by forming a dielectric body and an upper electrode on the lower electrode layer in lying states (44).