发明名称 APPARATUS AND METHOD FOR DETECTING PATTERN DISTORTION AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To detect pattern distortion on a finished pattern and perform higher precision pattern distortion error verification by comparing a polygonized finishing predicted pattern with an inspection reference pattern. SOLUTION: Vertex number reducing means 4 reduces the vertex number outputted from means 3 for turning a predicted pattern profile to a polygon of vertex number to one which can be treated by a common CAD software. A finishing predicted pattern data retaining part 5 retains polygon data with the vertex number thereof being reduced. Further, inspection reference pattern forming means 6 forms a reference pattern used for detecting pattern distortion not smaller than a permissible range from a design layout pattern data and an inspection reference pattern data retaining part 7 retains it. Pattern distortion detecting means 8 compares a finishing predicted pattern with a comparison reference pattern and extracts the part wherein pattern distortion not smaller than a permissible range occurs and a pattern distortion information retaining part 9 retains it.
申请公布号 JP2000182921(A) 申请公布日期 2000.06.30
申请号 JP19980337710 申请日期 1998.11.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAOKA HIRONOBU;MORIIZUMI KOICHI
分类号 H01L21/027;G01B11/16;G03F1/00;G03F1/68;G03F7/20;G03F7/26 主分类号 H01L21/027
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