发明名称 Method of forming a dicing area of a semicondutor substrate
摘要 A semiconductor substrate is provided having a principal surface which includes a plurality of device areas separated by at least one dicing area. The at least one dicing area includes at least one each of a test device and a measuring mark, and each of the test device and the measuring mark includes a plurality of closely adjacent projections defining a narrow depression therebetween. In one aspect, each narrow depression defined by the closely adjacent projections of each of the test device and the measuring mark is covered with a protective film prior to dicing. In another aspect, the projections are etched either wholly or partially away to eliminate or reduce the size of the narrow depression prior to dicing. In yet another aspect, the narrow depression is filled with a metal film and then a low viscosity resist, prior to application of a high viscosity resist and then later dicing.
申请公布号 US6331449(B1) 申请公布日期 2001.12.18
申请号 US19980172150 申请日期 1998.10.14
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 OHSUMI TAKASHI
分类号 H01L21/288;H01L21/301;H01L21/60;H01L21/78;(IPC1-7):H01L21/44 主分类号 H01L21/288
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