| 摘要 |
A thin film capacitor according to the present invention includes a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first electrode structural body and the second electrode structural body and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the orientation of the bismuth layer structured compound contained in the dielectric thin film in the [001] direction, namely, the c axis direction thereof, can be improved. Therefore, when a voltage is applied between the first electrode structural body and the second electrode structural body, since the direction of the electric field substantially coincides with the c axis of bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, since a bismuth oxide layer (Bi2O2)<2+> functions as an insulating layer, the insulation property of the dielectric thin film can be improved, whereby the dielectric thin film can be made much thinner. Since it is therefore possible to simultaneously make a thin film capacitor small and the capacitance thereof great, the thin film capacitor can be preferably used as a decoupling capacitor, in particular, a decoupling capacitor for an LSI having a high operating frequency.
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