PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
<p>In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on which a second pad and a lower electrode are subsequently provided. The insulating layer is etched to be a first insulating layer pattern having a first opening exposing the first pad. A first plug is formed in the first opening. The first insulating layer pattern where the first plug is formed is etched to be a second insulating layer pattern having a second opening exposing the lower electrode. A second plug including a phase-changeable material is formed in the second opening. A conductive wire and an upper electrode are formed on the first plug and the second plug, respectively.</p>
申请公布号
KR100711517(B1)
申请公布日期
2007.04.19
申请号
KR20060033239
申请日期
2006.04.12
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SHIN, HEE JU;SHIN, JONG CHAN;PARK, SOON OH;AN, HYEONG GEUN;KO, HAN BONG