发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method in which stability of electrical characteristics evaluation such as probe inspection and a connection process such as bonding is easily raised when a pad is provided on the wiring of a semiconductor element through an insulating film, while the semiconductor element with high yield and reliability is provided with no rising in manufacturing costs as no cracking occurs on the insulating film under the pad. <P>SOLUTION: A pad of two-layer structure comprising at least two kinds of material, a TiN film 61 and an Al film 62, is provided on a semiconductor element 50 and a wiring 57 through an insulating film 59. The Young's modulus of the material of the lower layer film is higher than that of the material of the upper layer film. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005223123(A) 申请公布日期 2005.08.18
申请号 JP20040029094 申请日期 2004.02.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YONEDA TADANAKA;MIMURA TADAAKI;INUI TADAHISA;OKI SHIGERU
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址