| 摘要 |
Embodiments of the invention provide treatment processes to reduce substrate contamination during a fabrication process within a vapor deposition chamber. A treatment process may be conducted before, during, or after a vapor deposition process, such as an atomic layer deposition (ALD) process. In one example of an ALD process, a process cycle, containing an intermediate treatment step and a predetermined number of ALD cycles, is repeated until the deposited material has a desired thickness. The chamber and substrates may be exposed to an inert gas, an oxidizing gas, a nitriding gas, a reducing gas, or plasmas thereof during the treatment processes. In some examples, the treatment gas may contain ozone, water, ammonia, nitrogen, argon, or hydrogen. In one example, a process for depositing a hafnium oxide material within a batch process chamber includes a pretreatment step, an intermediate step during an ALD process, and a post-treatment step.
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