NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT WITH PERIODIC GAIN ACTIVE LAYER

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element with a periodic gain active layer, capable of satisfactorily emitting light.SOLUTION: The nitride semiconductor light-emitting element with the periodic gain active layer comprises an n-type semiconductor layer 41, a p-type semiconductor layer 42, and a double wavelength resonator 29. The nitride semiconductor light-emitting element with the periodic gain active layer also comprises between the n-type semiconductor layer 41 and the p-type semiconductor layer 42: a first active layers 10 and a second active layer 12 which are disposed at a peak position of light intensity being present within the double wavelength resonator 29; and an intermediate layer 11 that is disposed between the first active layer 10 and the second active layer 12. A light-emitting intensity of the second active layer 12 that is disposed closer to the p-type semiconductor layer 42 is greater than that of the first active layer 10 that is disposed closer to the n-type semiconductor layer 41.SELECTED DRAWING: Figure 7