| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon-containing resist underlayer film material suitable for use in lithography using a light source of short wavelength, ensuring a sufficiently higher etching rate than a resist upper layer film and a sufficiently lower etching rate than a substrate to be worked and an organic film, and having functions by which the shape of a resist pattern formed in the resist upper layer film can be made perpendicular and line edge roughness and dimensional uniformity can be particularly improved. <P>SOLUTION: The silicon-containing resist underlayer film material of a multilayer resist film used in lithography contains at least a high molecular compound comprising repeating units a1 and/or a2 shown by formulae (1). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
