| 发明名称 |
Electronic device and method for fabricating the same |
| 摘要 |
Provided is an electronic device including a semiconductor memory. The semiconductor memory includes a first metal oxide layer disposed over a substrate and including a trench therein, a second metal oxide layer disposed along an inner wall of the trench, a selector disposed over the second metal oxide layer and buried in a part of the trench, and a top electrode disposed over the selector. |
| 申请公布号 |
US9391273(B1) |
申请公布日期 |
2016.07.12 |
| 申请号 |
US201514873135 |
申请日期 |
2015.10.01 |
| 申请人 |
SK HYNIX INC. |
发明人 |
Yoo Myoung-Sul |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising a semiconductor memory,
wherein the semiconductor memory comprises: a first metal oxide layer disposed over a substrate and including a trench therein; a second metal oxide layer disposed along an inner wall of the trench; a selector disposed over the second metal oxide layer and buried in a part of the trench; and a top electrode disposed over the selector. |
| 地址 |
Icheon KR |
