Top-side contact structure and fabrication method thereof

摘要

A top-side contact structure is provided. The top-side contact structure includes a substrate. The substrate includes a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semiconductor layer on the insulating layer. The top-side contact structure also includes a first trench and a second trench formed in the second semiconductor layer and respectively extending along a first direction and a second direction. The first trench and the second trench connect to each other at an intersection point. The top-side contact structure also includes an insulating material filling the first trench and the second trench. The top-side contact structure also includes a contact plug formed at the intersection point and directly contacting the first semiconductor layer. A method for fabricating a top-side contact structure is also provided.

主权项

1. A top-side contact structure, comprising:
a substrate comprising a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semiconductor layer on the insulating layer; a first trench formed in the second semiconductor layer and extending along a first direction; a second trench formed in the second semiconductor layer and extending along a second direction, wherein the first trench and the second trench connect to each other at an intersection point; an insulating material filling the first trench and the second trench; and a contact plug formed at the intersection point and directly contacting the first semiconductor layer.