Memory cells

摘要

Some embodiments include a memory cell having a pair of electrodes, and a plurality of switching levels between the electrodes. Each switching level has an ion buffer region and a dielectric region. At least one switching level differs from another switching level in one or both of thickness and composition of the ion buffer region and/or the dielectric region.

主权项

1. A memory cell, comprising:
a pair of electrodes, the electrodes being a first electrode and a second electrode, the first electrode being over the second electrode; first and second switching regions between the electrodes; the first switching region being over the second switching region; the first switching region comprising a first ion buffer layer and a first dielectric layer; the second switching region comprising a second ion buffer layer and a second dielectric layer; wherein the first and second ion buffer layers comprise CuZrAlTeO, where the chemical formula lists primary constituents rather than designating a specific stoichiometry; an ion source region between the first switching region and the first electrode; the second switching region being spaced from the ion source region by the first switching region; wherein the first dielectric layer is thicker than the second dielectric layer; wherein the first and second ion buffer layers comprise first and second concentrations of tellurium, respectively; and wherein the second concentration of tellurium is higher than the first concentration of tellurium; and wherein the first and second ion buffer layers comprise first and second concentrations of aluminum, respectively; and wherein the second concentration of aluminum is lower than the first concentration of aluminum.