IC and IC manufacturing method

摘要

Disclosed is a method of manufacturing a vertical bipolar transistor in a CMOS process, comprising implanting an impurity of a first type into a the substrate (100) to form a buried region (150, 260) therein; forming a halo implant (134) using an impurity of a second type and a shallow implant (132) using an impurity of the first type, said halo implant enveloping the shallow implant in the substrate and being located over said buried region (150, 250); forming, adjacent to the halo implant (134), a further implant (136) using an impurity of the second type for providing a conductive connection to the halo implant; and providing respective connections (170, 160, 270) to the further implant (136), the shallow implant (132) and the buried region (150, 260) allowing the shallow implant, halo implant and buried region to be respectively operable as emitter, base and collector of the vertical bipolar transistor. Hence, an IC may be provided that comprises vertical bipolar transistors manufactured using CMOS processing steps only.

主权项

1. A method of manufacturing a vertical bipolar transistor in a CMOS process, comprising:
forming a collector by: implanting an impurity of a first type into a substrate to form n-wells in the substrate and separated from one another at a predefined spacing; and connecting, after implanting the n-wells, the n-wells by laterally diffusing the impurity of the first type from each of said n-wells into a portion of the substrate between the n-wells; forming a halo implant using an impurity of a second type and a shallow implant using an impurity of the first type, said halo implant enveloping the shallow implant in the substrate and being located over the laterally-diffused impurities of the collector, said halo implant vertically separating the shallow implant from the laterally-diffused impurities of the collector; forming, laterally spaced from the halo implant, a further implant using an impurity of the second type for providing a conductive connection through a MOSFET channel and to the halo implant, wherein the MOSFET channel is formed in one of the n-wells; and providing respective conductive connections to the further implant, the shallow implant and the collector allowing at least a portion of each of the shallow implant, the halo implant and the collector to be respectively operable as an emitter, base and collector of the vertical bipolar transistor.