MEMORY DEVICE CONTROL METHOD, AND MEMORY DEVICE

摘要

A memory device control method of an embodiment of the present invention is configured as follows: a first semiconductor memory receives a read command sent from a controller; a second semiconductor memory receives a write command sent from the controller; data is read from within the first semiconductor memory on the basis of the read command; the first semiconductor memory sends the data and a control signal indicating that the data has been outputted; and on the basis of the write command, the second semiconductor memory receives the data at a timing based on the control signal, and the received data is written in the second semiconductor memory.