OPTOELECTRONIC DEVICE WITH IMPROVED REFLECTIVITY

摘要

The invention concerns an optoelectronic device (40) comprising: a substrate (14); a first layer (42) covering the substrate, the first layer having a thickness greater than or equal to 15 nm and comprising a first material having an extinction coefficient greater than or equal to 3 for any wavelength between 380 and 650 nm; a second layer (18) covering and in contact with the first layer, the second layer having a thickness less than or equal to 20 nm and comprising a second material having a refraction index of between 1 and 3 and an extinction coefficient less than or equal to 1.5 or any wavelength between 380 and 650 nm; and conical or frustoconical wire semiconductor elements (24) each having a light-emitting diode stack (DEL), being in contact with the second layer.

主权项

1. An optoelectronic device comprising:
a substrate a first layer or first portions covering the substrate, the first layer or the first portions having a thickness greater than or equal to 15 nm and comprising a first material having an extinction coefficient greater than or equal to 3 for any wavelength in the range from 380 nm to 650 nm; a second layer or second portions covering the first layer or the first portions and in contact with the first layer or with the first portions, the second layer or the second portions having a thickness smaller than or equal to 20 nm and comprising a second material having a refraction index in the range from 1 to 3 and an extinction coefficient smaller than or equal to 1.5 for any wavelength in the range from 380 nm to 650 nm; and light-emitting diodes (LED) comprising wire, conical, or frustoconical semiconductor elements, the semiconductor elements being in contact with the second layer or with the second portions, the first layer or the first portions covering the substrate and being interposed between the substrate and the semiconductor elements.