| 发明名称 |
SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH WIDE BAND GAP EMITTER |
| 摘要 |
A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm. |
| 申请公布号 |
US2016284916(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201615179682 |
申请日期 |
2016.06.10 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Hekmatshoar-Tabari Bahman;Khakifirooz Ali;Sadana Devendra K.;Shahidi Ghavam G.;Shahrjerdi Davood |
| 分类号 |
H01L31/074;H01L31/036;H01L31/0336;H01L31/0216;H01L31/0224;H01L31/18;H01L31/0236 |
主分类号 |
H01L31/074 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a photovoltaic device, said method comprising:
providing an absorption layer of a crystalline type IV semiconductor material having a first conductivity type; and epitaxially forming an emitter layer of a crystalline type III-V semiconductor material having a second conductivity type on a surface of the absorption layer. |
| 地址 |
Armonk NY US |
