| 主权项 |
1. A solar cell, comprising:
a semiconductor substrate of a first conductive type and including a first side and a second side opposite the first side, the second side having a textured structure formed on the entire second side of the semiconductor substrate; a first doped region of the first conductive type and a second doped region of a second conductive type opposite the first conductive type on the first side of the semiconductor substrate; a first passivation layer on the first doped region and the second doped region and exposing a portion of a back surface of each of the first and second doped regions, the first passivation layer being formed of silicon nitride (SiNx), silicon dioxide (SiOx), or a combination thereof and having a single-layered structure or a multi-layered structure; a second passivation layer on the second side of the semiconductor substrate; an anti-reflection layer on the second passivation layer; and a first electrode electrically connected to the first doped region and a second electrode electrically connected to the second doped region, wherein the first and second electrodes include respectively: a metal seed layer having a first portion directly contacting one of the first doped region and the second doped region, and a second portion directly contacting the first passivation layer, a diffusion barrier layer on the metal seed layer, a first conductive layer on the diffusion barrier layer and formed by plating, the first conductive layer including a bottom surface and side surfaces, and a second conductive layer on exposed bottom and side surfaces of the first conductive layer and formed by plating, wherein the first doped region is coplanar with the second doped region. |
