Solid imaging device including photoelectric conversion unit and TDI transfer unit

摘要

In a solid-state imaging device 1, an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 161 to 165 are electrically connected to the OFG 5 at connecting parts 171 to 175. Therefore, when voltage values V1 to V5 applied to the connecting parts 171 to 175 by the voltage application units 161 to 165 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4, whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.

主权项

1. A solid-state imaging device comprising:
a photoelectric conversion unit, disposed along a predetermined direction, for generating an electric charge according to light incident thereon; a TDI transfer unit for TDI-transferring the electric charge generated in the photoelectric conversion unit from an earlier stage side to a later stage side along the predetermined direction, the TDI transfer unit configured so as to operate on a plurality of pixels at the same time; an overflow drain, disposed along the photoelectric conversion unit, including an overflow gate having a predetermined electric resistance value and earlier stage and later stage side parts; and a voltage application unit electrically connected to apply voltage values to the overflow gate at a plurality of connecting parts of the overflow gate, wherein the voltage application unit is configured to adjust the voltage values applied to the plurality of connecting parts of the overflow gate, and the overflow gate is configured to respond to the voltage application unit adjusting the voltage values applied to the plurality of connecting parts of the overflow gate by yielding respectively higher and lower voltage values at the earlier stage and later stage side parts of the overflow gate.