发明名称 |
Thermal management of tightly integrated semiconductor device, system and/or package |
摘要 |
Some implementations provide a package that includes a first die and a second die adjacent to the first die. The second die is capable of heating the first die. The package also includes a leakage sensor configured to measure a leakage current of the first die. The package also includes a thermal management unit coupled to the leakage sensor. The thermal management unit configured to control a temperature of the first die based on the leakage current of the first die. |
申请公布号 |
US9508607(B2) |
申请公布日期 |
2016.11.29 |
申请号 |
US201313741755 |
申请日期 |
2013.01.15 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Chua-Eoan Lew G.;Zhang Rongtian |
分类号 |
G06F17/50;H01L21/66;H01L35/00;G07F17/32;G06F1/20;H01L23/34;H01L25/065;G06F1/32;H01L25/18 |
主分类号 |
G06F17/50 |
代理机构 |
|
代理人 |
Gallardo Michelle S. |
主权项 |
1. A package comprising:
a first die, wherein the first die is an integrated circuit (IC); a second die adjacent to the first die, the second die capable of heating the first die; a first plurality of through substrate vias (TSVs) configured to couple the first die to the second die; a leakage sensor configured to measure a leakage current of the first die; and a thermal management unit configured to couple to the leakage sensor, the thermal management unit configured to control a temperature of the first die based on the leakage current of the first die. |
地址 |
San Diego CA US |