发明名称 Thermal management of tightly integrated semiconductor device, system and/or package
摘要 Some implementations provide a package that includes a first die and a second die adjacent to the first die. The second die is capable of heating the first die. The package also includes a leakage sensor configured to measure a leakage current of the first die. The package also includes a thermal management unit coupled to the leakage sensor. The thermal management unit configured to control a temperature of the first die based on the leakage current of the first die.
申请公布号 US9508607(B2) 申请公布日期 2016.11.29
申请号 US201313741755 申请日期 2013.01.15
申请人 QUALCOMM Incorporated 发明人 Chua-Eoan Lew G.;Zhang Rongtian
分类号 G06F17/50;H01L21/66;H01L35/00;G07F17/32;G06F1/20;H01L23/34;H01L25/065;G06F1/32;H01L25/18 主分类号 G06F17/50
代理机构 代理人 Gallardo Michelle S.
主权项 1. A package comprising: a first die, wherein the first die is an integrated circuit (IC); a second die adjacent to the first die, the second die capable of heating the first die; a first plurality of through substrate vias (TSVs) configured to couple the first die to the second die; a leakage sensor configured to measure a leakage current of the first die; and a thermal management unit configured to couple to the leakage sensor, the thermal management unit configured to control a temperature of the first die based on the leakage current of the first die.
地址 San Diego CA US