METHOD OF INTRODUCING IMPURITIES TO SEMICONDUCTOR FILM INCLUDING HYDROGEN,申请号JP19890025155-传众专利搜索

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发明名称	METHOD OF INTRODUCING IMPURITIES TO SEMICONDUCTOR FILM INCLUDING HYDROGEN
摘要
申请公布号	JPH02205353(A)	申请公布日期	1990.08.15
申请号	JP19890025155	申请日期	1989.02.03
申请人	TOSHIBA CORP	发明人	TSUNASHIMA YOSHITAKA
分类号	H01L27/04;H01L21/316;H01L21/822	主分类号	H01L27/04
代理机构		代理人
主权项
地址

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