INTEGRATED CIRCUIT, AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a good Schottky diode by heat-treating a whole substrate to alloy a Schottky electrode with a silicon surface. CONSTITUTION:The layers for an aluminum Schottky electrode 20 and an aluminum-silicon ohmic electrode 25 are deposited in a manner that the connection 30 between the Schottky electrode 20 and the ohmic electrode 25 is away from a Schottky junction 23. The ohmic electrode layer 25 on the Schottky electrode layer 20 is patterned by a lift off technique to form both electrodes. A heat treatment is carried out for annealing and the alloying of the Schottky electrode 20. Since the connection 30 between aluminum and aluminum-silicon is separated from the Schottky junction 25, only one annealing process is required, and the ohmic electrode and the Schottky electrode from good contact. Thus, a good Schottky diode is provided.