| 摘要 |
In diodes used with high withstand voltages, the pin-type diode has a low on-resistance, but a large switching loss. Even if a lifetime killer is introduced, the low on-resistance and the switching loss cannot be compatible since both factors are in a trade-off relation. The invention overcomes these problems by providing a semiconductor device that includes p+-type anode layers and p+-type floating drain layers that are connected to the anode layers by a MOSFET 20 formed on the surface of an n--type conductivity-modulating layer. When a forward voltage is applied, holes are injected from the drain layers to create an element with a conductivity-modulated condition and realize a low on-resistance. By the time a reverse voltage is applied, the drain layers have already been separated to reduce the number of excessive carriers. Thus, the reverse recovery current is suppressed.
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