| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the step coverage of a conductive layer and to reduce the lifting possibility of a photosensitive film pattern by anisotropically etching a first substance film formed on the whole face of a substrate, forming a spacer on the sidewall of the photosensitive film pattern and anisotropically etching the photosensitive film pattern as an etching mask. SOLUTION: Impurity layers 32 and an interlayer insulating layer 38 are formed on a semiconductor substrate 30. A photosensitive film pattern 40 for exposing the interlayer insulating layer 38 in a region, where a contact hole 44 is formed, is formed. A substance whose etching selection degree on anisotropic etching is inferior is evaporated on the whole face, and a first substance film is formed. The first substance film is etched anisotropically, and a space 42 is formed on the sidewall of the photosensitive film pattern 40. The spacer 42 and the interlayer insulating film 38 are anisotropically etched with the photosensitive film pattern 40 as the etching mask, and the contact hole 44 is formed on the interlayer insulating film 38. Thus, the deterioration of the step coverage of the conductive layer is prevented, since a light spot is not formed on the contact hole 44.</p> |
