发明名称 POWER SEMICONDUCTOR MODULE
摘要 <p>PROBLEM TO BE SOLVED: To specify the direction and the size of warps on the rear surface of a base upon completion of a module by varying the height of a protrusion provided on the base side or the case side depending on the position of the module. SOLUTION: A protrusion is provided on a case 106 and an adhesive 108 is made thick on the peripheral part by setting the height Ls1 of a protrusion on the peripheral of a module higher that the height Ls2 in the center thereof. The distance to the bonding face of a case 106 except the protrusion is different within the module with reference to the rear surface of the base 101 and it is longer on the peripheral part than in the center. Final rear surface shape of the module can be controlled by determining the warpage previously based on the material of the base 101 and the case 16 and the module size and adjusting the height of the protrusion depending on the deformation. Consequently, the module can be manufactured depending on the shape of heat dissipation fins for mounting the module and the mounting method thereof.</p>
申请公布号 JPH10340975(A) 申请公布日期 1998.12.22
申请号 JP19970150643 申请日期 1997.06.09
申请人 HITACHI LTD 发明人 KOIKE YOSHIHIKO;SHIMIZU HIDEO;KUSHIMA TADAO;TANAKA AKIRA;INOUE KOICHI;SAITO RYUICHI
分类号 H01L23/28;H01L23/24;(IPC1-7):H01L23/24 主分类号 H01L23/28
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