发明名称 Structure and method for index-guided buried heterostructure AlGalnN laser diodes
摘要 An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
申请公布号 US2002094003(A1) 申请公布日期 2002.07.18
申请号 US20010025462 申请日期 2001.12.26
申请人 XEROX CORPORATION 发明人 BOUR DAVID P.;KNEISSL MICHAEL A.;ROMANO LINDA T.
分类号 H01S5/227;H01S5/20;H01S5/323;H01S5/343;(IPC1-7):H01S5/00 主分类号 H01S5/227
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