发明名称 |
Structure and method for index-guided buried heterostructure AlGalnN laser diodes |
摘要 |
An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
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申请公布号 |
US2002094003(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20010025462 |
申请日期 |
2001.12.26 |
申请人 |
XEROX CORPORATION |
发明人 |
BOUR DAVID P.;KNEISSL MICHAEL A.;ROMANO LINDA T. |
分类号 |
H01S5/227;H01S5/20;H01S5/323;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/227 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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