High density plasma chemical vapor deposition chamber

摘要

The present invention provides a high density plasma (HDP) chemical vapor deposition (CVD) chamber. The upper wall of the HDP CVD chamber in the present invention is composed by two ceramic layers with a defaulted distance, so the number and the distribution of the nozzles on the inner layer of the upper wall of the chamber can be adjusted according to desire. In another hand, the material of the upper wall of the chamber in the present invention is ceramic so that can be penetrated by the electromagnetic field created by the inductive coil entwined outside the chamber to generate a region of plasma within the chamber. By the application of the present invention, the time and the costs of installing the nozzles can be saved and the problem of adjusting the nozzles is not need to consider.