发明名称 |
PHOTORESIST REMOVER AND VAMP FORMING METHOD FOR SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoresist remover and a vamp forming method for a semiconductor device using the same in which a photoresist can be effectively removed by a simple process. <P>SOLUTION: A protecting film pattern is formed with an opening for partially exposing an upper part of a metal wiring pattern on a substrate with the metal wiring pattern formed thereon. The photoresist having a vamp opening is patterned on the protecting film pattern and a metal is grown in the vamp opening to form the vamp. The photo-resist pattern is then removed by the photoresist remover containing, as main components, monoethanolamine and dimethylacetamide. Thus, the photoresist pattern can be efficiently and perfectly removed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2004363555(A) |
申请公布日期 |
2004.12.24 |
申请号 |
JP20040046348 |
申请日期 |
2004.02.23 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHON SANG-MOON;TO JINKAI;JUN PIL-KWON;BOKU TOCHIN |
分类号 |
H01L21/60;C11D7/32;C11D11/00;G03F7/32;G03F7/42;H01L21/311;H01L21/44;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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