ORGANIC FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要
It is an object to provide an electrode for an organic field-effect transistor having a semiconductor layer formed of an organic semiconductor material (in the present invention, referred to as an organic field-effect transistor), which can reduce the energy barrier at an interface with the semiconductor layer. A composite layer including an organic compound and a metal oxide is used for the electrode for the organic field-effect transistor, in other words the composite layer is used for at least a part of either a source electrode or a drain electrode in the organic field-effect transistor.
申请公布号
WO2006062217(A1)
申请公布日期
2006.06.15
申请号
WO2005JP22714
申请日期
2005.12.05
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;OHSAWA, NOBUHARU;HIRAKATA, YOSHIHARU;FURUKAWA, SHINOBU