| 摘要 |
A plasma etching apparatus is provided to prevent Vpp drop effect of high-frequency power by maintaining constantly a gap between a baffle plate and a depo shield or the baffle plate and an inner wall of a process chamber. A process chamber(300) is used for supplying a reaction gas. An electrostatic chuck(200) is positioned at a lower part of the process chamber. A wafer(100) is loaded into the electrostatic chuck. A baffle plate(400) is installed between the process chamber and the electrostatic chuck in order to seal a bottom of the process chamber and discharge products due to etching reaction. A baffle plate supporter(410) is formed at a lower end of the baffle plate in order to maintain constantly a gap between the baffle plate and an inner wall of the process chamber.
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