发明名称 |
Furnace purification and metal fluoride crystal grown in a purified furnace |
摘要 |
The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.
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申请公布号 |
US7306673(B2) |
申请公布日期 |
2007.12.11 |
申请号 |
US20040971315 |
申请日期 |
2004.10.22 |
申请人 |
CORNING INCORPORATED |
发明人 |
FREDHOLM MICHELLE M. L.;KOHLI JEFFREY T.;LEBLOND NICHOLAS;MAYOLET ALEXANDRE M.;PSHENITSYNA VIKTORIA;SAXENA PAWAN;SCHERMERHORN PAUL M. |
分类号 |
C30B11/00 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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