| 摘要 |
A method for fabricating a semiconductor device includes forming a silicon layer pattern in a Silicon-on-Insulator ("SOI") semiconductor substrate to define an active region, selectively patterning an insulating film in the SOI semiconductor substrate by using a gate mask to form an under-cut space under the silicon layer pattern, and forming a gate structure including a gate electrode pattern and a gate hard mask layer pattern formed over the gate electrode pattern. The gate electrode pattern surrounds the silicon layer pattern thereby filling up the under-cut space.
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