| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of having a semiconductor element made more compact, the semiconductor element and a substrate. SOLUTION: While the semiconductor element 12 is provided with electrodes 82a to 82e for a resistance ladder nearby the resistance ladder 80, an insulating film 18 is provided with a connection pattern 21 for the resistance ladder which connects an input-side outer lead 22 to the electrodes 82a to 82e for the resistance ladder, and a metal wiring pattern 54. COPYRIGHT: (C)2009,JPO&INPIT
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