| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase shift mask which is applicable to, for example, a crystallizer to control a position of a crystal core, and then can substantially control a formation region of a crystal two-dimensionally. SOLUTION: The phase shift mask comprises: a first region (11) and a second region (12) which are formed on both sides of a substantially linear boundary line (10a) and have a first phase difference; and a micro region (13) of a predetermined shape which is formed in at least either region of the first region and second region along the boundary line. A second phase difference is applied to between the first region or second region where the micro region is formed and the micro region. COPYRIGHT: (C)2009,JPO&INPIT
|
