| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device becoming normally-off, by optimizing a film thickness and an Al composition ratio for an electron supply layer. SOLUTION: The semiconductor device 10 forms an electron transit layer 17 on a substrate 18 by epitaxial growth, and further forms an electron supply layer 15 on the electron transit layer 17 by epitaxial growth. The electron transit layer 17 and the electron supply layer 15 are formed into a heterojunction structure, and is set to be HEMT, where a two-dimensional gas channel 16 can be formed at the junction interface. The electron supply layer 15 is covered with an insulating film 14, and the source, gate, and drain electrodes 11, 12, 13 are provided. The electron supply layer 15 is formed, by setting the Al composition ratio and film thickness to 10-18[%] and 5-15 [nm], respectively. The manufactured semiconductor device 10 becomes normally-off preventing cracks, or the like from occurring. Accordingly, the semiconductor device 10 can be used as a power device. COPYRIGHT: (C)2010,JPO&INPIT |
