System and method for fabricating a 3D image sensor structure

摘要

A system and method for fabricating a 3D image sensor structure is disclosed. The method comprises providing an image sensor with a backside illuminated photosensitive region on a substrate, applying a first dielectric layer to the first side of the substrate opposite the substrate side where image data is gathered, and applying a semiconductor layer that is optionally polysilicon, to the first dielectric layer. A least one control transistor may be created on the first dielectric layer, within the semiconductor layer and may optionally be a row select, reset or source follower transistor. An intermetal dielectric may be applied over the first dielectric layer; and may have at least one metal interconnect disposed therein. A second interlevel dielectric layer may be disposed on the control transistors. The dielectric layers and semiconductor layer may be applied by bonding a wafer to the substrate or via deposition.

主权项

1. A device comprising:
a substrate having an image sensor disposed thereon; a first dielectric layer disposed on a first side of the substrate; a semiconductor layer disposed on the first dielectric layer, the semiconductor layer having an opening extending therethrough; a plurality of transistors disposed on the semiconductor layer; a second dielectric layer disposed over at least one of the plurality of transistors, a portion of the second dielectric layer extending through the opening in the semiconductor layer and contacting the first dielectric layer; a first vertical interconnect extending through the opening in the semiconductor layer and contacting a transfer gate of the image sensor and a second vertical interconnect extending through the opening in the semiconductor layer and contacting a floating diffusion region of the image sensor; and one or more interconnects disposed over the second dielectric layer, the one or more interconnects electrically connected to at least one of the plurality of transistors.