发明名称 Mark segmentation method and method for manufacturing a semiconductor structure applying the same
摘要 In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation method comprises the following steps. First, a plurality of segments having a width WS and separated from each other by a space SS formed on a substrate are identified by a processor. Thereafter, a plurality of marks are set over the segments by the processor. This step comprises: (1) adjusting a width WM of each one of the marks being equal to m(WS+SS)+WS or m(WS+SS)+SS by the processor, wherein m is an integer; and (2) adjusting a space SM of adjacent two of the marks by the processor such that WM+SM=n(WS+SS), wherein n is an integer.
申请公布号 US9373505(B2) 申请公布日期 2016.06.21
申请号 US201414278296 申请日期 2014.05.15
申请人 UNITED MICROELECTRONICS CORP. 发明人 Liou En-Chiuan;Huang Yu-Ying;Li Jen-Hsiu;Chen Mei-Chen;Chen Ya-Ling;Wang Yi-Jing;Huang Chi-Ming
分类号 H01L23/544;H01L21/033 主分类号 H01L23/544
代理机构 WPAT, PC 代理人 WPAT, PC ;King Justin
主权项 1. A mark segmentation method, comprising: identifying a plurality of segments having a width WS and separated from each other by a space SS formed by a processor; and setting a plurality of marks over the segments by the processor, comprising: step (1): adjusting a width WM of each one of the marks being equal to m(WS+SS)+WS or m(WS+SS)+SS by the processor, wherein m is an integer; andstep (2): adjusting a space SM of adjacent two of the marks by the processor such that WM+SM=n(WS+SS), wherein n is an integer;wherein the step (1) and the step (2) are repeated.
地址 Hsinchu TW