Hydroxyl group termination for nucleation of a dielectric metallic oxide

摘要

A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.

主权项

1. A method of forming a semiconductor structure comprising:
forming a semiconductor-containing dielectric material layer on a semiconductor material portion of a substrate; forming another semiconductor-containing dielectric material layer on another semiconductor material portion of said substrate, forming a hydroxyl group terminated surface of said semiconductor-containing dielectric material layer and another hydroxyl group terminated surface of said another semiconductor-containing dielectric material layer by treating a top surface of said semiconductor-containing dielectric material and a to s surface of said another semiconductor-containing dielectric material with an etchant selected from a basic solution and a basic vapor; and depositing a metal oxide layer directly on said hydroxyl group terminated surface and said another hydroxyl group terminated surface employing atomic layer deposition, wherein said semiconductor-containing dielectric material layer and said another semiconductor-containing dielectric material layer have different compositions.