| 发明名称 | Methods for stripping photoresist and/or cleaning metal regions | ||
| 摘要 | Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma. | ||
| 申请公布号 | US9373497(B2) | 申请公布日期 | 2016.06.21 |
| 申请号 | US201313759958 | 申请日期 | 2013.02.05 |
| 申请人 | Novellus Systems, Inc. | 发明人 | Chen David;Goto Haruhiro Harry;Su Martina;Greer Frank;Alokozai Shamsuddin |
| 分类号 | C03C15/00;H01L21/67;H01L21/02;H01L21/311 | 主分类号 | C03C15/00 |
| 代理机构 | Weaver Austin Villeneuve & Sampson LLP | 代理人 | Weaver Austin Villeneuve & Sampson LLP |
| 主权项 | 1. A method for removing material from a metal region overlying a semiconductor substrate, the method comprising: forming a plasma from a gas comprising hydrogen and carbon dioxide; and exposing the metal region to the plasma to thereby remove material from the metal region of the semiconductor substrate. | ||
| 地址 | Fremont CA US | ||