| 摘要 |
The present invention relates to a semiconductor device and a manufacturing method thereof, wherein the semiconductor device comprises: source select lines, word lines, drain select lines, and bit lines, which are stacked on a substrate where a first string area and a second string area are defined; channel films and memory films which vertically penetrate the source select lines, the word lines, and the drain select lines in the first string area and the second string area; and a common source line which vertically penetrates the source select lines, the word lines, and the drain select lines at the centers of the first string area and the second string area, and which extends to a lower part of the source select lines. Thereby, the capacity of a memory device can be enhanced and electric properties can be improved. |
