发明名称 ELECTRODE FOR BISMUTH-BASED DIELECTRIC, AND CAPACITOR
摘要 PROBLEM TO BE SOLVED: To prevent an interface of an electrode and a dielectric from being made thermally unstable owing to the diffusion of Bi in Bi-based dielectric material into the electrode under a high-temperature condition in a manufacturing process or use.SOLUTION: The above problem can be solved by an electrode in contact with a Bi-based dielectric material, which is arranged so as to include an element hard to diffuse. Specifically, the following can be used as such element: beryllium, magnesium, calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, zinc, aluminum, gallium, indium, thallium, sulfur, germanium, tin, arsenic and antimony. A capacitor according to the arrangement like this can be preferably used for e.g. a motor vehicle.SELECTED DRAWING: None
申请公布号 JP2016164901(A) 申请公布日期 2016.09.08
申请号 JP20150044135 申请日期 2015.03.06
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 OSADA TAKAHIRO;SOMU KUMARAGURUBARAN;CHIKYO TOYOHIRO;TAKAHASHI KENICHIRO;RI SEIKI;SUZUKI SETSU;TSUNEKAWA YOSHIFUMI
分类号 H01G4/008;H01G4/12;H01G4/33 主分类号 H01G4/008
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