Method of forming shallow trench isolation and semiconductor device

摘要

According to an exemplary embodiment, a semiconductor device is provided. The semiconductor device includes: a substrate; a first vertical structure protruding from the substrate; a second vertical structure protruding from the substrate; an STI between the first vertical structure and the second vertical structure; wherein a first horizontal width between the first vertical structure and the STI is substantially the same as a second horizontal width between the second vertical structure and the STI.

主权项

1. A method of forming a shallow trench isolation between a first vertical structure and a second vertical structure in a substrate, comprising:
providing the substrate; providing the first vertical structure and the second vertical structure over the substrate; conformally forming a dielectric layer over the substrate, the first vertical structure, and the second vertical structure; etching the dielectric layer to expose a portion of the substrate corresponding to the shallow trench isolation; etching the exposed portion of the substrate to form a recess corresponding to the shallow trench isolation; removing the dielectric layer; and forming an oxide layer in the recess as the shallow trench isolation by:
forming the oxide layer over the substrate, the first vertical structure, and the second vertical structure using flowable CVD;performing CMP on the oxide layer and stopping on the first vertical structure and the second vertical structure, andetching the oxide layer to expose the substrate and to form the shallow trench isolation.