发明名称 D/A conversion circuit, oscillator, electronic apparatus, and moving object
摘要 A D/A conversion circuit includes a plurality of resistors that are connected to each other in series, and a plurality of MOS transistors that are connected to terminals of the plurality of resistors, respectively. The plurality of resistors and the plurality of MOS transistors are formed on a semiconductor substrate. Each of the plurality of resistors is constituted by a resistive element and a plurality of contacts provided in the resistive element. The plurality of MOS transistors are disposed so that a plurality of virtual straight lines that pass through each of the plurality of contacts and are perpendicular to a longitudinal direction of the resistive element pass between gate electrodes of two adjacent MOS transistors, when seen in a plan view of the semiconductor substrate.
申请公布号 US9515673(B2) 申请公布日期 2016.12.06
申请号 US201614995473 申请日期 2016.01.14
申请人 Seiko Epson Corporation 发明人 Isozaki Shigenori
分类号 H03M1/66;H01L27/06;H01L49/02;H01L27/02;H01L29/49;H01L27/092;H03B5/02 主分类号 H03M1/66
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A D/A conversion circuit comprising: a plurality of resistors that are connected to each other in series; and a plurality of MOS transistors that are connected to terminals of the plurality of resistors, respectively, wherein the plurality of resistors and the plurality of MOS transistors are formed on a semiconductor substrate, wherein the plurality of resistors are constituted by a resistive element and a plurality of contacts provided in the resistive element, and wherein the plurality of MOS transistors are disposed so that a plurality of virtual straight lines that pass through each of the plurality of contacts and are perpendicular to a longitudinal direction of the resistive element pass between gate electrodes of two adjacent MOS transistors, when seen in a plan view of the semiconductor substrate.
地址 JP