Power semiconductor devices having superjunction structures with implanted sidewalls

摘要

A semiconductor device has a drift region having an upper surface and a lower surface. A first contact is on the upper surface of the drift region and a second contact is on the lower surface of the drift region. The drift region includes a first semiconductor pillar that has a tapered sidewall and that is doped with first conductivity type impurities and a second semiconductor pillar on the tapered sidewall of the first semiconductor pillar, the second semiconductor pillar doped with second conductivity type impurities that have an opposite conductivity from the first conductivity type impurities.

主权项

1. A semiconductor device, comprising:
a drift region having an upper portion and a lower portion; a first contact on the upper portion of the drift region; and a second contact on the lower portion of the drift region, wherein the drift region includes:
a first semiconductor pillar that has a tapered sidewall and that is doped with first conductivity type impurities; anda second semiconductor pillar having a substantially constant width on the tapered sidewall of the first semiconductor pillar, the second semiconductor pillar doped with second conductivity type impurities that have an opposite conductivity from the first conductivity type impurities.