Silicon carbide bipolar junction transistor including shielding regions

摘要

A silicon carbide (SiC) bipolar junction transistor (BJT) and a method of manufacturing such a SiC BJT is provided. The SiC BJT can include a collector region having a first conductivity type, a base region having a second conductivity type opposite the first conductivity type, and an emitter region having the first conductivity type, the collector region, the base region and the emitter region being arranged as a stack. The emitter region defining an elevated structure defined at least in part by an outer sidewall on top of the stack. The base region having a portion capped by the emitter region and defining an intrinsic base region where the intrinsic base region includes a portion extending from the emitter region to the collector region. The SiC BJT can include a first shielding region and a second shield region each having the second conductivity type.

主权项

1. A silicon carbide (SiC) bipolar junction transistor (BJT), comprising:
a collector region having a first conductivity type; a base region having a second conductivity type opposite the first conductivity type; an emitter region having the first conductivity type, the collector region, the base region and the emitter region being arranged as a stack, the emitter region defining an elevated structure defined at least in part by an outer sidewall on top of the stack, the base region having a portion capped by the emitter region and defining an intrinsic base region; and a first shielding region and a second shielding region each having the second conductivity type, the first shielding region being arranged on a laterally opposite side of a portion of the intrinsic base region from the second shielding region, the collector region having a portion defining a channel portion in the collector region and separating the first shielding region from the second shielding region below the portion of the intrinsic base region, the first shielding region having a dopant level at an interface with the channel portion greater than a dopant level of the portion of the intrinsic base region, the first shielding region extending to a further depth in the stack than the portion of the intrinsic base region and by a distance corresponding to about 15% to 150% of a width the channel portion.