| 发明名称 |
Capacitor-referenced temperature sensing |
| 摘要 |
The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor. |
| 申请公布号 |
US9523615(B1) |
申请公布日期 |
2016.12.20 |
| 申请号 |
US201514927864 |
申请日期 |
2015.10.30 |
| 申请人 |
SiTime Corporation |
发明人 |
Perrott Michael H.;Lee Shungneng |
| 分类号 |
G01K7/16;G01K7/34;G01K7/22 |
主分类号 |
G01K7/16 |
| 代理机构 |
|
代理人 |
Shemwell Charles |
| 主权项 |
1. A temperature sensor comprising:
a microelectromechanical-system (MEMS) structure having a resistance that varies with temperature; a complementary-metal-oxide-semiconductor (CMOS) capacitive element that exhibits an effective resistance to an alternating current; circuitry to determine a difference, indicative of change in temperature, between the resistance of the MEMS structure and the effective resistance of the CMOS capacitive element. |
| 地址 |
Santa Clara CA US |
