| 摘要 |
PURPOSE:To enable dry etching, through which the quantity of side etching is reduced, by using an insulating film as a mask for etching a metallic film. CONSTITUTION:A MO film 3 is formed onto a gate oxide film 2 shaped onto the surface of a semiconductor substrate 1 through an evaporation method or a sputtering method or the like, an insulating film 5 is formed onto the film 3 through a vapor phase growth method at a low temperature so that the MO film 3 is not oxidized, and a mask pattern for a photo-resist 4 is shaped selectively. The photo-resist is dry-etched by Freon gas, but the MO film is not etched approximately at that time. The MO film 3 is dry-etched while employing the insulating film 5 as a mask by CCl4 gas. When the film 3 is dry-etched under conditions in which a selection ratio of the insulating film 5 to MO can be taken sufficiently at that time, the size of the initial photo-resist 4 is not changed approximately and the MO film 3 is shaped because the insulating film 5 functions as a mask even when the photo-resist 4 is etched.
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