| 摘要 |
There is provided a CMOS solid-state image pickup device capable of reducing the size, increasing the number of pixels, reducing the power consumption, increasing the speed, and improving the image quality. The CMOS solid-state image pickup device includes a light reception section (11) for performing photo-electrical conversion according to the received light amount, a transfer gate (12a) for reading out the electric charge obtained by photo-electrical conversion in the light reception section (11), and a peripheral transistor arranged at the periphery of the light reception section (11). The drive method of the CMOS solid-state image pickup device is characterized in that the voltage applied to the transfer gate (12a) is set higher than the voltage applied to the peripheral transistor.
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